Search for: All records

Abstract Recent research in multi-principal element alloys (MPEAs) has increasingly focused on the role of short-range order (SRO) on material performance. However, the mechanisms of SRO formation and its precise control remain elusive, limiting the progress of SRO engineering. Here, leveraging advanced additive manufacturing techniques that produce samples with a wide range of cooling rates (up to 10⁷K s⁻¹) and an enhanced semi-quantitative electron microscopy method, we characterize SRO in three CoCrNi-based face-centered-cubic (FCC) MPEAs. Surprisingly, irrespective of the processing and thermal treatment history, all samples exhibit similar levels of SRO. Atomistic simulations reveal that during solidification, prevalent local chemical order arises in the liquid-solid interface (solidification front) even under the extreme cooling rate of 10¹¹K s⁻¹. This phenomenon stems from the swift atomic diffusion in the supercooled liquid, which matches or even surpasses the rate of solidification. Therefore, SRO is an inherent characteristic of most FCC MPEAs, insensitive to variations in cooling rates and even annealing treatments typically available in experiments. 

Metalorganic chemical vapor deposition (MOCVD) is a promising technique for wafer-scale synthesis of MoS2 monolayers for 2D field-effect transistors (2D-FETs) and related devices. Epitaxial growth of MoS2 on sapphire provides films that are crystallographically well-oriented but typically contain low-angle grain boundaries (e.g., mirror twins), voids, and other defects depending on growth conditions and substrate characteristics. In this study, we investigate microstructure, optical properties, and field-effect characteristics of wafer-scale MoS2 monolayers grown by MOCVD on c-plane sapphire over a narrow window of growth temperatures (900–1000 °C). The density of low-angle grain boundaries in the MoS2 monolayer was found to decrease dramatically from 50% areal coverage for films grown at 900 °C to 5% at 1000 °C. This decrease in low-angle grain boundary density is correlated with an increase in the room-temperature photoluminescence intensity of A excitons and a decrease in the full-width-half maximum (FWHM) of the Raman A1g peak, which are typically indicative of a general reduction in defects in MoS2. However, the best transport properties (e.g., mean field-effect mobility mFE = 17.3 cm2/V s) were obtained in MoS2 monolayers grown at an intermediate temperature of 950 °C. It was found that as the growth temperature increased, small regions bound by high-angle boundaries begin to appear within the monolayer and increase in areal coverage, from ∼2% at 900 °C to ∼5% at 950 °C to ∼10% at 1000 °C. The growth temperature of 950 °C, therefore, provides an intermediate condition where the combined effects of low-angle and high-angle boundaries are minimized. The results of this study provide guidance on MOCVD growth and characterization that can be used to further optimize the performance of MoS2 2D-FETs.